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Will the power be interpreted if the current towards MOSFET is drained?

Latest Updated:12/01/2011


If pushing the current from the source toward the drain of a power MOSFET, can the allowable power dissipation, on-resistor, etc., be interpreted to be the same as the data sheet values?


The power ratings are the same as those for the forward direction. Regarding the on-resistor, no ratings are provided as electrical characteristics.
Based on the element structure, if gate forward voltage is applied, the structure is such that the parasite diode and the on-resistor of the MOS are connected in parallel.
If voltage drops caused by the on-resistor of the MOS are considerably lower than VF, almost no current flows to the diode and instead it flows to the on-resistor.
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